2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0.127 max 3 . 8 0 to -25 2 unit: mm 1 2 3 1. gate 2. drain 3. source absolute maxim um ratings t a = 2 5 paramet er sym bol rating unit dra in-sour ce v oltage v dss 250 v gate source voltage v gs 20 v dra in curr ent continuous i d 3 a dra in curr ent - puls ed (no te 2) i dm 9 a pow er dissi pation @ t a = 25 (note 1) 40 w - der ate abov e 25 0.32 w / thermal resi st ance, junct ion - am bient r thja 100 /w oper ating and storage tem pera ture t j , t stg -55 to +150 note:1.pow er rating w hen m ounted on fr-4 glass epox y printed circuit boar d using recom m ende d footprint. 2.puls e test : pulse w idth 300s, duty cycle 2% p d features v ds (v) = 250v r ds(on) 2 (v gs = 10v) 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com s m d ty p e m o s f e t kxu 03n2 5 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type product specification
s m d ty p e m o s f e t el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit dra in-sour ce b reakdow n voltage bv dss v gs = 0 v , i d = 250 a 250 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage current i gss v gs = 20 v, v ds = 0 v 100 na zero gate voltage dra in curr ent i dss v ds =250 v, v gs = 0 v 10 a dra in-sour ce on-state resist ance r ds(on) v gs = 10 v, i d = 1.5 a 1.4 2.0 forw ard tra nsconductance g fs v ds = 50 v, i d = 1.4 a 2.3 s total gate charg e q g 9.8 15 gate-sour ce charge q gs 2.1 gate-d rain ch arge q gd 4.2 input capacitance c i ss 307 430 output capa cit ance c oss 57 75 rev erse transfer capa cit ance c rss 14 25 turn- on delay tim e t d(on ) 7 15 turn- on rise tim e t r 5 15 turn- off delay tim e t d(of f) 15 30 turn- off fall tim e t f 6 15 dra in-sour ce diode forw ard voltage v sd 0.9 1.6 v rev erse recove ry tim e trr 153 ns ma x im um body-d iode co ntinuous curr ent i s 3 a v dd = 125v , v gs =10v,r g = 4.7 , i d = 3a ns v ds = 200v , v gs = 10 v , i d =3 a nc v ds =25v ,v gs = 0 , f = 1.0mh z pf v gs = 0 v , i s = 3 a ,dis / dt = 100 a/ s kxu 03n2 5 mark ing mar king 3n25 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type product specification
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